High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding
| dc.citation.epage | 1843 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 1841 | en_US |
| dc.citation.volume | 84 | en_US |
| dc.citation.woscount | 9 | |
| dc.contributor.author | Peng, YCS | en_US |
| dc.contributor.author | Wu, YS | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:39:27Z | |
| dc.date.available | 2014-12-08T15:39:27Z | |
| dc.date.issued | 2004-03-15 | en_US |
| dc.description.abstract | High-power light-emitting diodes (LEDs) fabricated on Cu substrates were investigated in this study. The AlGaInP LED structure was bonded to a Cu substrate by using indium-tin-oxide as the diffusion barrier layer. It was found that Cu-substrate-bonded LED devices could be operated in a much higher injection forward current, 800 mA, which was eight times higher than that used in traditional GaAs-substrate LEDs. The luminous intensity of the Cu-substrate LEDs could reach as high as 1230 mcd, which was three times higher than that of the GaAs-substrate LEDs. (C) 2004 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1682696 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1682696 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26947 | |
| dc.identifier.wosnumber | WOS:000220182600009 | |
| dc.language.iso | en_US | en_US |
| dc.title | High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding | en_US |
| dc.type | Article | en_US |