Development and Electrical Performance of Low Temperature Cu-Sn/In Bonding for 3D Flexible Substate Integration
| dc.citation.epage | 165 | en_US |
| dc.citation.spage | 164 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Hu, Yu-Chen | en_US |
| dc.contributor.author | Chen, Kuan-Neng | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2017-04-21T06:48:46Z | |
| dc.date.available | 2017-04-21T06:48:46Z | |
| dc.date.issued | 2016 | en_US |
| dc.description.abstract | An innovative bonding approach applied to flexible substrate bonding is proposed in this research. Thin-film metal pad is fabricated as bonding medium to provide vertical stacking. As compared to other bonding methods, such as anisotropic conductive film (ACF) or non-conductive paste (NCP), thin-film metal pad bonding approach provides the most attractive advantage of fine-pitch. The bonding condition at low temperature exhibits good electrical performance, proving its great potential in the applications of flexible substrate stacking. | en_US |
| dc.identifier.isbn | 978-1-5090-0726-4 | en_US |
| dc.identifier.journal | 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/134682 | |
| dc.identifier.wosnumber | WOS:000391250500071 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Development and Electrical Performance of Low Temperature Cu-Sn/In Bonding for 3D Flexible Substate Integration | en_US |
| dc.type | Proceedings Paper | en_US |
Files
License bundle
1 - 1 of 1
Loading...
- Name:
- license.txt
- Size:
- 1.71 KB
- Format:
- Item-specific license agreed to upon submission
- Description: