Studying of InSb MOS Capacitors for Post CMOS Application
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.contributor.author | Hai-Dang Trinh | en_US |
| dc.contributor.author | Lin, Yueh-Chin | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:35:18Z | |
| dc.date.available | 2014-12-08T15:35:18Z | |
| dc.date.issued | 2013 | en_US |
| dc.description.abstract | In this study, the properties of high-k/InSb are verified. The gate dielectrics including Al2O3 and HfO2 are used for studying. The band alignment of Al2O3/InSb and HfO2/InSb are estimated using x-ray photoelectron spectroscopy spectra and Fowler-Nordheim (F-N) current-voltage (I-V) characteristic. The effect of annealing temperatures on the electrical properties of the MOSCAPs is also studied. It is found that the In, Sb out diffusion into high-k would be a major reason to degrade the electrical properties of high k/InSb structures. | en_US |
| dc.identifier.isbn | 978-1-4799-0518-8 | en_US |
| dc.identifier.journal | 2013 28TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2013) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/23929 | |
| dc.identifier.wosnumber | WOS:000332492400073 | |
| dc.language.iso | en_US | en_US |
| dc.subject | CMOS | en_US |
| dc.subject | MOSCAPs | en_US |
| dc.subject | InSb | en_US |
| dc.subject | Al2O3 | en_US |
| dc.subject | HfO2 | en_US |
| dc.subject | sub-nanometter | en_US |
| dc.subject | band alignment | en_US |
| dc.title | Studying of InSb MOS Capacitors for Post CMOS Application | en_US |
| dc.type | Proceedings Paper | en_US |
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