A flexible organic pentacene nonvolatile memory based on high-kappa dielectric layers

dc.citation.epageen_US
dc.citation.issue23en_US
dc.citation.volume93en_US
dc.citation.woscount23
dc.contributor.authorChang, Ming-Fengen_US
dc.contributor.authorLee, Po-Tsungen_US
dc.contributor.authorMcAlister, S. P.en_US
dc.contributor.authorChin, Alberten_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:10:31Z
dc.date.available2014-12-08T15:10:31Z
dc.date.issued2008-12-08en_US
dc.description.abstractWe report a pentacene thin film transistor nonvolatile memory fabricated on a flexible polyimide substrate. This device shows a low program/erase voltage of 12 V, a speed of 1/100 ms, an initial memory window of 2.4 V, and a 0.78 V memory window after 48 h. This has been achieved by using a high-kappa dielectric as charge trapping, blocking, and tunneling gate insulator layers.en_US
dc.identifier.doi10.1063/1.3046115en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3046115en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/8040
dc.identifier.wosnumberWOS:000261699700072
dc.language.isoen_USen_US
dc.subjectflexible electronicsen_US
dc.subjecthigh-k dielectric thin filmsen_US
dc.subjectorganic semiconductorsen_US
dc.subjectrandom-access storageen_US
dc.subjectsemiconductor thin filmsen_US
dc.subjectthin film transistorsen_US
dc.titleA flexible organic pentacene nonvolatile memory based on high-kappa dielectric layersen_US
dc.typeArticleen_US

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