Method for treating group III nitride semiconductor
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20120052691 | zh_TW |
| dc.contributor.author | Lee Wei-I | en_US |
| dc.contributor.author | Hsu Ying-Chia | en_US |
| dc.contributor.author | Yeh Yen-Hsien | en_US |
| dc.contributor.author | Chen Kuei-Ming | en_US |
| dc.date.accessioned | 2014-12-16T06:15:16Z | |
| dc.date.available | 2014-12-16T06:15:16Z | |
| dc.date.issued | 2012-03-01 | en_US |
| dc.description.abstract | The invention discloses a treating method to produce various patterns on the surface by using gases with ability to etch the group III nitride semiconductor in certain conditions. The selective etching makes some specific patterns on group III nitride semiconductor surface, and different forms of the patterns can be controlled by the selective etching conditions. | zh_TW |
| dc.identifier.govdoc | H01L021/306 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105206 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Method for treating group III nitride semiconductor | zh_TW |
| dc.type | Patents | en_US |