Electron field emission properties on ultra-nano-crystalline diamond coated silicon nanowires
| dc.citation.epage | 1820 | en_US |
| dc.citation.issue | 7-10 | en_US |
| dc.citation.spage | 1817 | en_US |
| dc.citation.volume | 17 | en_US |
| dc.contributor.author | Tzeng, Yu-Fen | en_US |
| dc.contributor.author | Lee, Chi-Young | en_US |
| dc.contributor.author | Chiu, Hsin-Tien | en_US |
| dc.contributor.author | Tai, Nyan-Hwa | en_US |
| dc.contributor.author | Lin, I-Nan | en_US |
| dc.contributor.department | 應用化學系 | zh_TW |
| dc.contributor.department | Department of Applied Chemistry | en_US |
| dc.date.accessioned | 2014-12-08T15:43:17Z | |
| dc.date.available | 2014-12-08T15:43:17Z | |
| dc.date.issued | 2008-07-01 | en_US |
| dc.description.abstract | Ultra-nano-crystal line diamond (UNCD) nano-emitters were prepared by coating UNCD films on the tip of silicon nanowire (SiNW) templates by microwave plasma-enhanced chemical vapor deposition process. The electron field emission properties of the UNCD/SiNW nano-emitters varied markedly with the pre-seeding process for the SiNW-templates. The direct ultrasonication process is more efficient in the formation of the diamond nuclei than the carburization/ultrasonication process, yielding UNCD/SiNWs nano-emitters with better electron field emission properties. The electron field emission can be turned on at (E(0))(UNCD/SiNW4)= 3.75 V/mu m, yielding a large electron field emission current density of (Je)(UNCD/SiNW4)= 11.22 mA/cm(2) at an applied field of 9.75 V/mu m. These characteristics are significantly better than those of bare SiNWs or planar UNCD films. (C) 2008 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.diamond.2008.03.023 | en_US |
| dc.identifier.issn | 0925-9635 | en_US |
| dc.identifier.journal | DIAMOND AND RELATED MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.diamond.2008.03.023 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29298 | |
| dc.identifier.wosnumber | WOS:000259598300159 | |
| dc.language.iso | en_US | en_US |
| dc.subject | electron field emission properties | en_US |
| dc.subject | ultra-nano-crystalline diamond (UNCD) | en_US |
| dc.subject | silicon nanowires (SiNWs) | en_US |
| dc.subject | UNCD nano-emitters | en_US |
| dc.title | Electron field emission properties on ultra-nano-crystalline diamond coated silicon nanowires | en_US |
| dc.type | Article; Proceedings Paper | en_US |