化學氣相沈積氧化鉭在Noble金屬電極之動態隨機存取記憶體電容器之研究
| dc.contributor.author | 羅正忠 | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:37:11Z | |
| dc.date.available | 2014-12-13T10:37:11Z | |
| dc.date.issued | 1999 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC88-2215-E009-035 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=444202&docId=80442 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/94447 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 氧化鉭 | zh_TW |
| dc.subject | 動態隨機存取記憶體 | zh_TW |
| dc.subject | 化學氣相沈積法 | zh_TW |
| dc.subject | 記憶體元件 | zh_TW |
| dc.subject | 電容器 | zh_TW |
| dc.subject | Tantalum oxide | en_US |
| dc.subject | DRAM | en_US |
| dc.subject | CVD | en_US |
| dc.subject | Memory device | en_US |
| dc.subject | Capacitor | en_US |
| dc.title | 化學氣相沈積氧化鉭在Noble金屬電極之動態隨機存取記憶體電容器之研究 | zh_TW |
| dc.title | Study of CVD Ta205 on Noble Metal Electrode for High-Density DRAM Capacitors | en_US |
| dc.type | Plan | en_US |