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Growth of ZnMgO/ZnO films on r-plane sapphires by pulsed laser deposition

dc.citation.epage1852en_US
dc.citation.issue7-9en_US
dc.citation.spage1847en_US
dc.citation.volume310en_US
dc.contributor.authorLiang, Mei-Huien_US
dc.contributor.authorHo, Yen-Tengen_US
dc.contributor.authorWang, Wei-Linen_US
dc.contributor.authorPeng, Chun-Yenen_US
dc.contributor.authorChang, Lien_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:44:01Z
dc.date.available2014-12-08T15:44:01Z
dc.date.issued2008-04-01en_US
dc.description.abstractHigh-quality ZnMgO/ZnO multi-layer thin films in a-plane orientation were grown by pulsed laser deposition on r-plane sapphires. Reflection high-energy electron diffraction (RHEED) patterns were performed to monitor the growth morphology and the epitaxy. X-ray diffraction, RHEED, and atomic force microscopy show that anisotropic growth of a-plane ZnO results in stripe morphology, and the difference of thermal expansion between ZnO and sapphire plays a significant role on the film surface smoothness. Cross-sectional transmission electron microscopy identifies the cause of disorientation of ZnO growth on sapphire. (C) 2007 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.jcrysgro.2007.11.158en_US
dc.identifier.issn0022-0248en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2007.11.158en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/29754
dc.identifier.wosnumberWOS:000255843200101
dc.language.isoen_USen_US
dc.subjectcharacterizationen_US
dc.subjectlaser epitaxyen_US
dc.subjectoxidesen_US
dc.subjectsemiconducting II-VI materials depositionen_US
dc.titleGrowth of ZnMgO/ZnO films on r-plane sapphires by pulsed laser depositionen_US
dc.typeArticle; Proceedings Paperen_US

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