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BESOI的新製程

dc.contributor.author荊鳳德en_US
dc.contributor.authorCHIN ALBERTen_US
dc.contributor.department交通大學電子工程系zh_TW
dc.date.accessioned2014-12-13T10:37:10Z
dc.date.available2014-12-13T10:37:10Z
dc.date.issued1999en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC88-2215-E009-032zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=444170&docId=80434en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/94444
dc.language.isozh_TWen_US
dc.subject高速元件zh_TW
dc.subject矽絕緣體zh_TW
dc.subject無線通訊zh_TW
dc.subject多處理單元zh_TW
dc.subject金氧半場效電晶體zh_TW
dc.subjectHigh speed deviceen_US
dc.subjectSOIen_US
dc.subjectWireless communicationen_US
dc.subjectMulti-processing-uniten_US
dc.subjectMOSFETen_US
dc.subjectBESOIen_US
dc.titleBESOI的新製程zh_TW
dc.titleInnovative Process of BESOIen_US
dc.typePlanen_US

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