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Self-aligned tantalum oxide nanodot arrays through anodic alumina template

dc.citation.epage1570en_US
dc.citation.issue4-9en_US
dc.citation.spage1567en_US
dc.citation.volume83en_US
dc.contributor.authorWu, CTen_US
dc.contributor.authorKo, FHen_US
dc.contributor.authorHwang, HYen_US
dc.contributor.department材料科學與工程學系奈米科技碩博班zh_TW
dc.contributor.departmentGraduate Program of Nanotechnology , Department of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:16:52Z
dc.date.available2014-12-08T15:16:52Z
dc.date.issued2006-04-01en_US
dc.description.abstractA novel strategy for fabricating the ordered nanodot arrays of tantalum oxide with anodic alumina film is proposed to serve the template. Anodic oxidation of Al on TaN film has been performed in oxalic acid and sulfuric acid electrolytes at various applied voltages for porous alumina formation. Anodising reaction proceeds in the sequence of growth of porous anodic alumina when the aluminum layer is consumed up to the underlying TaN, and the growth of tantalum oxide under the bottoms of the alumina pores occurred simultaneously. The nanostructure of the nanodot arrays was studied by scanning electron microscopy, and the chemical composition of nanodots was analyzed by X-ray photoelectron spectroscopy. The nanodots are composed of nonstoichiometric TaOx. The nanodot diameter demonstrated here ranges between 15 nm and 70 nm and density ranges between 10(11) /cm(2) and 10(10)/cm(2). (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.mee.2006.01.092en_US
dc.identifier.issn0167-9317en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mee.2006.01.092en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/12394
dc.identifier.wosnumberWOS:000237581900229
dc.language.isoen_USen_US
dc.subjectporous aluminaen_US
dc.subjectnanodoten_US
dc.titleSelf-aligned tantalum oxide nanodot arrays through anodic alumina templateen_US
dc.typeArticle; Proceedings Paperen_US

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