鍗化錮之準靜態變動特性

Abstract

The I-V characteristics of over 150 bulk InSb single crystals at 78°K have been measured. These samples 1mm*1mm in cross section and 0.4 to 13 mm in length, are of either the p- or n- type with carrier concentration ranging from 2.5*10^13 to 2.1*10^16 /cm^3. These multi-valued I-V characteristics were found to be highly non-linear, with as much as four distinct regions each of which can be attributed to a different transport mechanism. Furthermore, these characteristics were found to be dependent not only on the carrier type and doping density of the sample but also on the contact material (In or Sn) used. A theoretical explanation of the observed behavior will be presented.