ENHANCED O2 PLASMA STRIPPING OF P+ AND SI+ IMPLANTED NEGATIVE RESIST BY H2 PLASMA PRETREATMENT

Abstract

Hydrogen plasma pretreatments (100 W, 20 sccm, 0.2 torr, 40 approximately 115-degrees-C, 10 approximately 30 min) of Si+, P+, B+ and As+ implanted (100 keV, 1x10(15) ion/cm2) Hunt HR-200 negative resists to the oxygen plasma stripping (100 W, 40 sccm, 0.45 torr, 40 approximately 115-degrees-C) were studied in this report. The results showed that only the resistance to oxygen plasma stripping of Si+ and P+ implanted HR-200 were greatly reduced at the conditions in this study. The activation energies Eact of Si+ and P+ implanted HR-200 by oxygen plasma stripping can be both brought down from approximately 1.3 to approximately 0.85 kcal/mole by hydrogen plasma pretreatment. The FTIR, SEM and ESCA analyses indicated the decreasing of carbonization layers by hydrogen plasma pretreatments.