Dimensional Dependences of the Dynamic-NBTI with 1.2 nm N20-ISSG oxynitrides
| dc.citation.epage | + | en_US |
| dc.citation.spage | 254 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Lai, Chao Sung | en_US |
| dc.contributor.author | Huang, D. C. | en_US |
| dc.contributor.author | Chung, S. S. | en_US |
| dc.contributor.department | 電機學院 | zh_TW |
| dc.contributor.department | College of Electrical and Computer Engineering | en_US |
| dc.date.accessioned | 2017-04-21T06:49:10Z | |
| dc.date.available | 2017-04-21T06:49:10Z | |
| dc.date.issued | 2007 | en_US |
| dc.identifier.isbn | 978-1-4244-1891-6 | en_US |
| dc.identifier.journal | 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/135141 | |
| dc.identifier.wosnumber | WOS:000255857100130 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Dimensional Dependences of the Dynamic-NBTI with 1.2 nm N20-ISSG oxynitrides | en_US |
| dc.type | Proceedings Paper | en_US |
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