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IMPROVEMENT OF RESISTIVE SWITCHING PROPERTIES OF Ti/ZrO2/Pt WITH EMBEDDED GERMANIUM

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dc.citation.epage116en_US
dc.citation.spage111en_US
dc.citation.volume245en_US
dc.citation.woscount0en_US
dc.contributor.authorLin, Chun-Anen_US
dc.contributor.authorPanda, Debashisen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2015-07-21T08:31:27Z
dc.date.available2015-07-21T08:31:27Z
dc.date.issued2014-01-01en_US
dc.description.abstractIn this study, we construct the Ti/ZrO2/Ge(5nm)/ZrO2/Pt structures with various positions of embedded Ge in ZrO2 films. After depositing a Ge layer, a 600 degrees C rapid thermal annealing is carried out. Compared to other Ge positions, the lowest forming voltage and the most stable resistive behavior are observed in the cell with a Ge layer near the top electrode. The curve fitting of high resistance state and low resistance state shows that Schottky emission in reset process and the ionic conduction during set process. The improved switching properties could be related to the formation of Gerrnanium oxide and the defect concentration reduction after annealing process.en_US
dc.identifier.isbn978-1-118-77140-2; 978-1-118-77127-3en_US
dc.identifier.issn1042-1122en_US
dc.identifier.journalADVANCES IN MULTIFUNCTIONAL MATERIALS AND SYSTEMS IIen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/125007
dc.identifier.wosnumberWOS:000350040300010en_US
dc.language.isoen_USen_US
dc.titleIMPROVEMENT OF RESISTIVE SWITCHING PROPERTIES OF Ti/ZrO2/Pt WITH EMBEDDED GERMANIUMen_US
dc.typeProceedings Paperen_US

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