Long-wavelength electroluminescence of InGaAs-capped type-II GaSb/GaAs quantum-rings at room temperature
| dc.citation.epage | 575 | en_US |
| dc.citation.issue | en_US | |
| dc.citation.spage | 571 | en_US |
| dc.citation.volume | 378 | en_US |
| dc.contributor.author | Lin, Wei-Hsun | en_US |
| dc.contributor.author | Wang, Kai-Wei | en_US |
| dc.contributor.author | Lin, Shih-Yen | en_US |
| dc.contributor.author | Wu, Meng-Chyi | en_US |
| dc.contributor.department | 光電學院 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | College of Photonics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:31:48Z | |
| dc.date.available | 2014-12-08T15:31:48Z | |
| dc.date.issued | 2013-09-01 | en_US |
| dc.description.abstract | The room-temperature photoluminescence (PL) and electroluminescence (EL) exceeding 1.3 mu m are observed for InGaAs-capped GaSb quantum-ring (QR) structures. With increasing In composition, the emission wavelength would shift from 1.18 to 131 mu m. The InGaAs-capped GaSb QRs also exhibit a higher injection current and stronger EL intensity at the same applied voltage. With the observation of low-temperature PL spectra, the transition mechanisms of the standard and InGaAs-capped QRs are further investigated. (c) 2012 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.jcrysgro.2012.12.066 | en_US |
| dc.identifier.issn | 0022-0248 | en_US |
| dc.identifier.journal | JOURNAL OF CRYSTAL GROWTH | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.jcrysgro.2012.12.066 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22480 | |
| dc.identifier.wosnumber | WOS:000323355900140 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Nanostructures | en_US |
| dc.subject | Antimonides | en_US |
| dc.subject | Molecular beam epitaxy | en_US |
| dc.subject | Semiconducting III-V materials | en_US |
| dc.title | Long-wavelength electroluminescence of InGaAs-capped type-II GaSb/GaAs quantum-rings at room temperature | en_US |
| dc.type | Article; Proceedings Paper | en_US |