A 53.4-mu W CMOS Temperature Sensor with an Inaccuracy of +/- 1.9 degrees C (3 sigma) from-65 degrees C to 165 degrees C

dc.citation.epage	877	en_US
dc.citation.spage	874	en_US
dc.contributor.author	Lee, Mitchell Sheng-Cheng	en_US
dc.contributor.author	Chen, Teng-Cheng	en_US
dc.contributor.author	Liou, Chia-Yi	en_US
dc.contributor.author	Chiueh, Herming	en_US
dc.contributor.department	電機工程學系	zh_TW
dc.contributor.department	Department of Electrical and Computer Engineering	en_US
dc.date.accessioned	2014-12-08T15:21:44Z
dc.date.available	2014-12-08T15:21:44Z
dc.date.issued	2011	en_US
dc.description.abstract	A 53.4-mu W CMOS temperature sensor with a 3 sigma inaccuracy of +/- 1.9 degrees C from -65 degrees C to 165 degrees C is designed and implemented in TSMC 0.18um CMOS technology. The proposed temperature sensor includes a pure-CMOS PTAT circuitry, a pre-amplifier and a low-power Sigma-Delta ADC. The proposed PATA circuit utilized temperature compensation technology to enhance the linearity. This circuit has widest temperature range compare to other designs, which is suitable to be utilized to electronic devices in extreme temperature condition.	en_US
dc.identifier.isbn	978-1-4244-9289-3	en_US
dc.identifier.journal	2011 IEEE SENSORS	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/15472
dc.identifier.wosnumber	WOS:000299901200208
dc.language.iso	en_US	en_US
dc.title	A 53.4-mu W CMOS Temperature Sensor with an Inaccuracy of +/- 1.9 degrees C (3 sigma) from-65 degrees C to 165 degrees C	en_US
dc.type	Proceedings Paper	en_US

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