以氫化物氣相磊晶法開發III-V族氮化物基板( II )
| dc.contributor.author | 李威儀 | en_US |
| dc.contributor.author | LEE WEI-I | en_US |
| dc.contributor.department | 國立交通大學電子物理學系(所) | zh_TW |
| dc.date.accessioned | 2014-12-13T10:49:53Z | |
| dc.date.available | 2014-12-13T10:49:53Z | |
| dc.date.issued | 2008 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC97-2622-E009-002 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=1630473&docId=278550 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/101884 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 以氫化物氣相磊晶法開發III-V族氮化物基板( II ) | zh_TW |
| dc.title | III-V Group Nitride Base Substrates Developed by Hydride Vapor Phase Epitaxy(II) | en_US |
| dc.type | Plan | en_US |