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新式低溫複晶矽薄膜電晶體之結構與技術在電抹除可程式唯讀記憶體的應用(III)

dc.contributor.author雷添福en_US
dc.contributor.authorLEI TAN-FUen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
dc.date.accessioned2014-12-13T10:28:26Z
dc.date.available2014-12-13T10:28:26Z
dc.date.issued2007en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC96-2221-E009-188zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=1471177&docId=264082en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/88331
dc.language.isozh_TWen_US
dc.title新式低溫複晶矽薄膜電晶體之結構與技術在電抹除可程式唯讀記憶體的應用(III)zh_TW
dc.titleNew Structure and Technology of Low-Temperature Poly-Si TFT for EEPROM Device Application(III)en_US
dc.typePlanen_US

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