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System-level ESD protection design with on-chip transient detection circuit

dc.citation.epage619en_US
dc.citation.spage616en_US
dc.contributor.authorYen, Cheng-Chengen_US
dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorShih, Pi-Chiaen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:25:03Z
dc.date.available2014-12-08T15:25:03Z
dc.date.issued2006en_US
dc.description.abstractA new on-chip transient detection circuit for system-level electrostatic (d) under bar ischarge (ESD) protection is proposed. By including this new proposed on-chip transient detection circuit, a hardware/firmware solution cooperated with power-on reset circuit has been analyzed to fix the system-level ESD issues. The circuit performance to detect different positive and negative fast electrical transients has been investigated by HSPICE simulator and verified in silicon chip. The experimental results in a 0.13-mu m CMOS process have confirmed that the proposed on-chip transient detection circuit can detect fast electrical transients during system-level ESD zapping.en_US
dc.identifier.doi10.1109/ICECS.2006.379864en_US
dc.identifier.isbn978-1-4244-0394-3en_US
dc.identifier.journal2006 13TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-3en_US
dc.identifier.urihttp://dx.doi.org/10.1109/ICECS.2006.379864en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/17421
dc.identifier.wosnumberWOS:000252489600154
dc.language.isoen_USen_US
dc.titleSystem-level ESD protection design with on-chip transient detection circuiten_US
dc.typeProceedings Paperen_US

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