AN SCR WITH SIMPLE MIS STRUCTURE

dc.citation.epage	L2170	en_US
dc.citation.issue	12	en_US
dc.citation.spage	L2169	en_US
dc.citation.volume	29	en_US
dc.citation.woscount	0
dc.contributor.author	CHANG, DCY	en_US
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	LEI, TF	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.date.accessioned	2014-12-08T15:05:25Z
dc.date.available	2014-12-08T15:05:25Z
dc.date.issued	1990-12-01	en_US
dc.description.abstract	A device to work as an SCR with a simple MIS p-n Structure is proposed and demonstrated. It employs two junction diodes, with a thin oxide layer grown prior to metallization. This device can act as a triac when a bi-directional ac voltage is applied, while acts as an SCR when a bias voltage is applied to the N-substrate.	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/3956
dc.identifier.wosnumber	WOS:A1990EP70300009
dc.language.iso	en_US	en_US
dc.subject	MIS SWITCHING DEVICES	en_US
dc.subject	SEMICONDUCTOR	en_US
dc.title	AN SCR WITH SIMPLE MIS STRUCTURE	en_US
dc.type	Article	en_US

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