2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without gate-oxide reliability issue

dc.citation.epage	823	en_US
dc.citation.spage	820	en_US
dc.contributor.author	Ker, Ming-Dou	en_US
dc.contributor.author	Wang, Tzu-Ming	en_US
dc.contributor.author	Liao, Hung-Tai	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.date.accessioned	2014-12-08T15:46:26Z
dc.date.available	2014-12-08T15:46:26Z
dc.date.issued	2008	en_US
dc.description.abstract	A new 2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without suffering gate-oxide reliability issue is proposed, which is one of the key mixed-voltage I/O cells in a cell library. The proposed circuit is realized with only thin gate-oxide devices with floating n-well technique. The proposed 2xVDD-tolerant crystal oscillator circuit has been designed and verified in a 90-mn 1-V CMOS process to serve 1/2-V mixed-voltage interface applications.	en_US
dc.identifier.isbn	978-1-4244-2078-0	en_US
dc.identifier.issn	0271-4302	en_US
dc.identifier.journal	PROCEEDINGS OF 2008 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-10	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/31253
dc.identifier.wosnumber	WOS:000258532100209
dc.language.iso	en_US	en_US
dc.title	2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without gate-oxide reliability issue	en_US
dc.type	Article	en_US

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