METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
| dc.citation.patentcountry | USA | en_US |
| dc.citation.patentnumber | 20180061642 | en_US |
| dc.contributor.author | Chao-Hsin CHIEN | en_US |
| dc.contributor.author | Chi-Wen LIU | en_US |
| dc.contributor.author | Chung-Chun HSU | en_US |
| dc.contributor.author | Wei-Chun CHI | en_US |
| dc.date.accessioned | 2019-04-11T06:05:30Z | |
| dc.date.available | 2019-04-11T06:05:30Z | |
| dc.date.issued | 2018-03-01 | en_US |
| dc.description.abstract | A method of manufacturing a semiconductor device includes forming a first metal layer on a semiconductor substrate and forming a second metal layer on the first metal layer. The second metal layer is formed of a different metal than the first metal layer. Microwave radiation is applied to the semiconductor substrate, first metal layer, and second metal layer to form an alloy comprising components of the first metal layer, second metal layer, and the semiconductor substrate. | en_US |
| dc.identifier.govdoc | H01L021/24 | en_US |
| dc.identifier.govdoc | H01L021/285 | en_US |
| dc.identifier.govdoc | H01L029/47 | en_US |
| dc.identifier.govdoc | H01L029/872 | en_US |
| dc.identifier.govdoc | H01L029/66 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/151419 | |
| dc.language.iso | en_US | en_US |
| dc.title | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE | en_US |
| dc.type | Patents | en_US |