空乏區寬度之調變效應對高低高雙飄帶衝度二極體之影響
| dc.citation.epage | =O60-1 | en_US |
| dc.citation.spage | 13 | en_US |
| dc.citation.volume | 3 | en_US |
| dc.contributor.author | 張懋中 | zh_TW |
| dc.contributor.author | 陳茂傑 | zh_TW |
| dc.contributor.author | M.C.Chang | en_US |
| dc.contributor.author | M.C.Chen | en_US |
| dc.date.accessioned | 2017-10-06T06:22:48Z | |
| dc.date.available | 2017-10-06T06:22:48Z | |
| dc.date.issued | 1977-09 | en_US |
| dc.description.abstract | The effect of the depletion-region-width modulation has been included in the Quasi-static large signal calculations of the Lo-Hi-Lo double drift IMPATT diodes.In addition, a linear-generation-function model is introduced to give a comprehensive understanding of the phase advance and the power degradation effect of the diodes.The phase advance △Ø is derived versus of voltage modulation. The output power losses are also calculated as a function of voltage swing and compared with the uncorrected results. Efficiency as a function of avalavche-to frift-voltage ratio Va/Vd is obtained and Va/Vd≈1.0 is shown as the optimum condition for a double drift Lo-Hi-Lo diodes at 50% modulation . | en_US |
| dc.identifier.journal | 交通大學學報 | zh_TW |
| dc.identifier.journal | The Journal of National Chiao Tung University | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/137587 | |
| dc.language.iso | en_US | en_US |
| dc.publisher | 交大學刊編輯委員會 | zh_TW |
| dc.title | 空乏區寬度之調變效應對高低高雙飄帶衝度二極體之影響 | zh_TW |
| dc.title | Effects of Depletion-Region-Width Modulation on the Properties of Lo-Hi-Lo Double Drift IMPATT Diodes | en_US |
| dc.type | Campus Publications | en_US |