Using Fluorine-ion Implanted a-Si Layer to Reduce Ni Contamination and Passivate the Defects in NILC poly-Si
| dc.citation.epage | 164 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 161 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.contributor.author | Chen, Chien-Chih | en_US |
| dc.contributor.author | Wu, YewChung Sermon | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:29:42Z | |
| dc.date.available | 2014-12-08T15:29:42Z | |
| dc.date.issued | 2010 | en_US |
| dc.description.abstract | The grain boundaries which included dangling bonds in Ni-metal-induced lateral crystallization (NILC) poly-Si TFT would trap Ni and NiSi2 precipitates. This phenomenon resulted in threshold voltage shifting and lower field-effect mobility. To resolve this issue, the a-Si layer with fluorine-ion implanted was used as gettering layer to reduce Ni contamination and passivate the dangling bonds in the active layer. It was found that the F-G layer could not only reduce the Ni contamination but also passivate the defects in NILC poly-Si. | en_US |
| dc.identifier.doi | 10.1149/1.3481231 | en_US |
| dc.identifier.isbn | 978-1-60768-174-8 | en_US |
| dc.identifier.issn | 1938-5862 | en_US |
| dc.identifier.journal | THIN FILM TRANSISTORS 10 (TFT 10) | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.3481231 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21333 | |
| dc.identifier.wosnumber | WOS:000315444100018 | |
| dc.language.iso | en_US | en_US |
| dc.title | Using Fluorine-ion Implanted a-Si Layer to Reduce Ni Contamination and Passivate the Defects in NILC poly-Si | en_US |
| dc.type | Proceedings Paper | en_US |