應用在Ku波段之摻雜及非摻雜氮化鎵高功率微波元件之製作及高頻特性量測與比較(I)
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.department | 國立交通大學材料科學與工程學系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:32:53Z | |
| dc.date.available | 2014-12-13T10:32:53Z | |
| dc.date.issued | 2003 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC92-2215-E009-046 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=873497&docId=167343 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/91771 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 應用在Ku波段之摻雜及非摻雜氮化鎵高功率微波元件之製作及高頻特性量測與比較(I) | zh_TW |
| dc.title | Comparision of the Properties of Delta-Doped and Un-Doped Gallium Nitride High Power Microwave Devices for Ku Band Application (I) | en_US |
| dc.type | Plan | en_US |