Correlation between the chemical compositions and optical properties of AlSixNy embedded layer for attenuated phase-shifting mask in 193 nm and the modification of the R-T method for measuring n and k
| dc.citation.epage | 3375 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 3371 | en_US |
| dc.citation.volume | 18 | en_US |
| dc.contributor.author | Lin, CM | en_US |
| dc.contributor.author | Loong, WA | en_US |
| dc.contributor.department | 應用化學系 | zh_TW |
| dc.contributor.department | Department of Applied Chemistry | en_US |
| dc.date.accessioned | 2014-12-08T15:44:44Z | |
| dc.date.available | 2014-12-08T15:44:44Z | |
| dc.date.issued | 2000-11-01 | en_US |
| dc.description.abstract | The formation and variation of AlN, Si3N4, and nitride compositions in AlSixNy (x similar to0.31, y similar to0.51) embedded material have been shown to correlate with its optical properties. The increasing content of AIN, Si3N4, and nitrides will increase n and decrease k of AlSixNy. A simple and effective correction of measured reflectance R% and transmittance T% based on scalar scattering theory has been applied to the R-T method for determining It and k of embedded layers for 193 nm lithography masks. A 0.2 mum etched pattern of an AlSixNy embedded layer on an oxide/Si wafer substrate was successfully fabricated. (C) 2000 American Vacuum Society. [S0734-211X(oo)08906-X]. | en_US |
| dc.identifier.doi | 10.1116/1.1319835 | en_US |
| dc.identifier.issn | 1071-1023 | en_US |
| dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1116/1.1319835 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30190 | |
| dc.identifier.wosnumber | WOS:000165935800145 | |
| dc.language.iso | en_US | en_US |
| dc.title | Correlation between the chemical compositions and optical properties of AlSixNy embedded layer for attenuated phase-shifting mask in 193 nm and the modification of the R-T method for measuring n and k | en_US |
| dc.type | Article; Proceedings Paper | en_US |