BARRIER HEIGHT REDUCTION OF THE SCHOTTKY-BARRIER DIODE USING A THIN HIGHLY DOPED SURFACE-LAYER

Simple item page
dc.citation.epage4922en_US
dc.citation.issue9en_US
dc.citation.spage4919en_US
dc.citation.volume51en_US
dc.citation.woscount18
dc.contributor.authorWU, CYen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.contributor.departmentNano Facility Centeren_US
dc.date.accessioned2014-12-08T15:06:28Z
dc.date.available2014-12-08T15:06:28Z
dc.date.issued1980en_US
dc.identifier.doi10.1063/1.328365en_US
dc.identifier.issn0021-8979en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.328365en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/5041
dc.identifier.wosnumberWOS:A1980KH98600058
dc.language.isoen_USen_US
dc.titleBARRIER HEIGHT REDUCTION OF THE SCHOTTKY-BARRIER DIODE USING A THIN HIGHLY DOPED SURFACE-LAYERen_US
dc.typeArticleen_US

Files

License bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description:
Download

Collections

期刊論文;;Articles