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Performance of Dual-Channel Gate-All-Around Polysilicon Nanowire Thin-film Transistor

dc.citation.epage152en_US
dc.citation.spage151en_US
dc.contributor.authorHuang, Po-Chunen_US
dc.contributor.authorSheu, Tzu-Shiunen_US
dc.contributor.authorChen, Chen-Chiaen_US
dc.contributor.authorChen, Lu-Anen_US
dc.contributor.authorSheu, Jeng-Tzongen_US
dc.contributor.department材料科學與工程學系奈米科技碩博班zh_TW
dc.contributor.departmentGraduate Program of Nanotechnology , Department of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:48:16Z
dc.date.available2014-12-08T15:48:16Z
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-2071-1en_US
dc.identifier.journal2008 IEEE SILICON NANOELECTRONICS WORKSHOPen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/32176
dc.identifier.wosnumberWOS:000279102800077
dc.language.isoen_USen_US
dc.titlePerformance of Dual-Channel Gate-All-Around Polysilicon Nanowire Thin-film Transistoren_US
dc.typeArticleen_US

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