TRANSVERSE MAGNETORESISTANCE OF HIGHLY DOPED N-TYPE INSB IN STRONG MAGNETIC-FIELDS

Simple item page
dc.citation.epage342en_US
dc.citation.issue5en_US
dc.citation.spage340en_US
dc.citation.volume34en_US
dc.citation.woscount2
dc.contributor.authorWU, CCen_US
dc.contributor.authorCHEN, Aen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用數學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Mathematicsen_US
dc.date.accessioned2014-12-08T15:06:32Z
dc.date.available2014-12-08T15:06:32Z
dc.date.issued1979en_US
dc.identifier.doi10.1063/1.90780en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.90780en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/5100
dc.identifier.wosnumberWOS:A1979GM86200014
dc.language.isoen_USen_US
dc.titleTRANSVERSE MAGNETORESISTANCE OF HIGHLY DOPED N-TYPE INSB IN STRONG MAGNETIC-FIELDSen_US
dc.typeArticleen_US

Files

License bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description:
Download

Collections

期刊論文;;Articles