Electronic Structure Dependence on the Density, Size and Shape of Ge/Si Quantum Dots Array

dc.citation.woscount	0	en_US
dc.contributor.author	Lee, Ming-Yi	en_US
dc.contributor.author	Tsai, Yi-Chia	en_US
dc.contributor.author	Li, Yiming	en_US
dc.contributor.author	Samukawat, Seiji	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.date.accessioned	2017-04-21T06:49:29Z
dc.date.available	2017-04-21T06:49:29Z
dc.date.issued	2015	en_US
dc.description.abstract	In this work, an efficient method is proposed to calculate the miniband structure and density of states for well-ordered Ge/Si-nanodisk array. Within the envelop-function framework, our approach surmounts theoretical approximations of the multi-dimensional Kronig-Penney method and provides a guideline for three-dimensional quantum dots design by simulating the effect of the interdot space on miniband structure.	en_US
dc.identifier.isbn	978-0-6925-1523-5	en_US
dc.identifier.journal	18TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2015)	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/135788
dc.identifier.wosnumber	WOS:000380398200037	en_US
dc.language.iso	en_US	en_US
dc.subject	Ge/Si quantum dots	en_US
dc.subject	Computational model	en_US
dc.subject	Miniband structure	en_US
dc.subject	Density and size of nanostructures	en_US
dc.title	Electronic Structure Dependence on the Density, Size and Shape of Ge/Si Quantum Dots Array	en_US
dc.type	Proceedings Paper	en_US

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