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SiOx/Si interfacial Si nano-pyramids enhancd electroluminescence from Si-rich SiOx MOSLED

dc.citation.spage107en_US
dc.citation.woscount0en_US
dc.contributor.authorLin, Gong-Ruen_US
dc.contributor.authorLin, Chi-Kuanen_US
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.date.accessioned2019-04-02T06:04:41Z
dc.date.available2019-04-02T06:04:41Z
dc.date.issued2006-01-01en_US
dc.description.abstractInterfacial (100)-oriented Si nanopyramids are synthesized with surface density of 10(9) cm(-2) prior to the growth of Si-rich SiOx, which greatly suppresses blue-green EL and improve near-infrared EL at 30 nW with lifetime of > 10 hrs.en_US
dc.identifier.journal2006 3RD IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/150869
dc.identifier.wosnumberWOS:000244096100037en_US
dc.language.isoen_USen_US
dc.subjectSi nano-pyramidsen_US
dc.subjectElectroluminescenceen_US
dc.subjectSi nanocrystalsen_US
dc.subjectSi-rich SiOxen_US
dc.subjectdiodeen_US
dc.titleSiOx/Si interfacial Si nano-pyramids enhancd electroluminescence from Si-rich SiOx MOSLEDen_US
dc.typeProceedings Paperen_US

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