Extremely High Mobility Ultra-Thin Metal-Oxide with ns(2)np(2) Configuration
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Shih, C. W. | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.author | Lu, Chun-Fu | en_US |
| dc.contributor.author | Yi, S. H. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2017-04-21T06:48:32Z | |
| dc.date.available | 2017-04-21T06:48:32Z | |
| dc.date.issued | 2015 | en_US |
| dc.description.abstract | To increase the transistor\'s current (I-ON) and decrease the off-state leakage (I-OFF), high-mobility, wide-bandgap and ultra-thin body channel materials are crucial for display, sub-10 nm MOSFET, and brain-mimicking 3D IC. The wide-bandgap ultra-thin-film SnO2 nMOSFET has achieved a high I-ON/I-OFF of > 10(7), and high mobility of >0.5X SiO2/Si device value operated at 1 MV/cm. The high mobility TFT is due to the overlapped orbitals. | en_US |
| dc.identifier.isbn | 978-1-4673-9894-7 | en_US |
| dc.identifier.journal | 2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/136042 | |
| dc.identifier.wosnumber | WOS:000380472500036 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Extremely High Mobility Ultra-Thin Metal-Oxide with ns(2)np(2) Configuration | en_US |
| dc.type | Proceedings Paper | en_US |
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