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三五族氮化合物半導體薄膜之物理特性---子計畫二:GaN類半導體材料及物理結構之光性研究(I)

dc.contributor.author陳衛國en_US
dc.contributor.authorWEI-KUOCHENen_US
dc.contributor.department國立交通大學電子物理學系zh_TW
dc.date.accessioned2014-12-13T10:38:59Z
dc.date.available2014-12-13T10:38:59Z
dc.date.issued1996en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC85-2112-M009-047zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=223293&docId=40032en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/95936
dc.language.isozh_TWen_US
dc.title三五族氮化合物半導體薄膜之物理特性---子計畫二:GaN類半導體材料及物理結構之光性研究(I)zh_TW
dc.titlePhysical Property Studies of III-V Semiconductor Nitride Films---Optical Property Studies of GaN-Based Semiconductor Materials and Structures (I)en_US
dc.typePlanen_US

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