The strain status of the buried self-assembled InAs quantum dots using MeV technique

dc.citation.epage	34	en_US
dc.citation.spage	29	en_US
dc.citation.volume	916	en_US
dc.contributor.author	Wang, H. Y.	en_US
dc.contributor.author	Chen, C. H.	en_US
dc.contributor.author	Niu, H.	en_US
dc.contributor.author	Wu, S. C.	en_US
dc.contributor.author	Lee, C. P.	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.date.accessioned	2014-12-08T15:24:43Z
dc.date.available	2014-12-08T15:24:43Z
dc.date.issued	2006	en_US
dc.description.abstract	The strain status of the buried self-assembled InAs quantum dots was comprehended by measurement first time. Results show the in-plane strain is compressive and the lattice in the growth direction is lager than the lattice of GaAs. The strain of the sample annealed at 650 degrees C relaxes in the growth direction. The growth and the lateral direction become relaxed in the sample annealed at 750 degrees C.	en_US
dc.identifier.issn	0272-9172	en_US
dc.identifier.journal	Solid-State Lighting Materials and Devices	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/17168
dc.identifier.wosnumber	WOS:000245337000004
dc.language.iso	en_US	en_US
dc.title	The strain status of the buried self-assembled InAs quantum dots using MeV technique	en_US
dc.type	Proceedings Paper	en_US

Files

Now showing 1 - 1 of 1