高介電氧化鋁閘極於下世代深次微米技術的應用
| dc.contributor.author | 荊鳳德 | en_US |
| dc.contributor.author | CHIN ALBERT | en_US |
| dc.contributor.department | 國立交通大學電子工程學系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:36:20Z | |
| dc.date.available | 2014-12-13T10:36:20Z | |
| dc.date.issued | 2000 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC89-2215-E009-099 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=583871&docId=109702 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/93871 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 高介電氧化鋁閘極於下世代深次微米技術的應用 | zh_TW |
| dc.title | High-K Al/sub 2/O/sub 3/ gate dielectrics on next generation VLSI technology | en_US |
| dc.type | Plan | en_US |