Fabrication of Ti and Co silicided shallow junctions using novel techniques
| dc.citation.epage | A664 | en_US |
| dc.citation.spage | A662 | en_US |
| dc.contributor.author | Ma, MP | en_US |
| dc.contributor.author | Lin, CT | en_US |
| dc.contributor.author | Cheng, HC | en_US |
| dc.contributor.department | 奈米中心 | zh_TW |
| dc.contributor.department | Nano Facility Center | en_US |
| dc.date.accessioned | 2014-12-08T15:27:44Z | |
| dc.date.available | 2014-12-08T15:27:44Z | |
| dc.date.issued | 1995 | en_US |
| dc.identifier.isbn | 7-5053-3285-6 | en_US |
| dc.identifier.journal | PROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19998 | |
| dc.identifier.wosnumber | WOS:A1995BF21N00196 | |
| dc.language.iso | en_US | en_US |
| dc.title | Fabrication of Ti and Co silicided shallow junctions using novel techniques | en_US |
| dc.type | Proceedings Paper | en_US |
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