Electromigration induced failure in SnAg3.8Cu0.7 solder joints for flip chip technology
| dc.citation.epage | 290 | en_US |
| dc.citation.spage | 287 | en_US |
| dc.contributor.author | Hsu, YC | en_US |
| dc.contributor.author | Shao, TL | en_US |
| dc.contributor.author | Chen, C | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:26:28Z | |
| dc.date.available | 2014-12-08T15:26:28Z | |
| dc.date.issued | 2002 | en_US |
| dc.description.abstract | Electromigration of SnAg3.8Cu0.7 Solder was investigated in flip chip solder bump. An under-bump metallization (UBM) of Cr/Cr-Cu/Cu tri-layer was deposited on the chip side and electroless Cu/Ni/Au pad was deposited on the BT board side. Electromigration damage was observed under the current density of 2 x 10(4) A/cm(2) at 100 degreesC. Voids were found at cathode side and crack was observed at solder/thin film UBM interface after current stressing, and the bump failed after 168-hour stressing. Copper atoms were found to move in the direction of electron flow. Intermetallic compounds of Cu-Sn an Ni-Cu-Sn were also observed to spread into the solder bump due to current stressing. | en_US |
| dc.identifier.doi | 10.1109/EMAP.2002.1188852 | en_US |
| dc.identifier.isbn | 0-7803-7682-X | en_US |
| dc.identifier.journal | PROCEEDINGS OF THE 4TH INTERNATIONAL SYMPOSIUM ON ELECTRONIC MATERIALS AND PACKAGING | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/EMAP.2002.1188852 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/18795 | |
| dc.identifier.wosnumber | WOS:000182081100048 | |
| dc.language.iso | en_US | en_US |
| dc.title | Electromigration induced failure in SnAg3.8Cu0.7 solder joints for flip chip technology | en_US |
| dc.type | Proceedings Paper | en_US |