<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css"> Skip to main content

General purpose RFICs using 0.35 um SiGeBiCMOS technology

dc.citation.epage117en_US
dc.citation.spage116en_US
dc.contributor.authorMeng, Cen_US
dc.contributor.authorWu, THen_US
dc.contributor.authorWu, THen_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.date.accessioned2014-12-08T15:25:20Z
dc.date.available2014-12-08T15:25:20Z
dc.date.issued2005en_US
dc.description.abstractThis paper presents an overview of several 5 GHz general purpose RFICs implemented using 0.35 urn SiGe BiCMOS technology by our research group. These RFICs include emitter-inductively-degenerated cascode LNA, shunt-series shunt-shunt dual feedback wideband amplifier, common mode feedback Gilbert down-converter, Gilbert up-converter with LC current mirrors and Gilbert down-converter with polyphase filters for image rejection.en_US
dc.identifier.isbn0-7803-9328-7en_US
dc.identifier.journal2005 Emerging Information Technology Conference (EITC)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/17719
dc.identifier.wosnumberWOS:000236376100034
dc.language.isoen_USen_US
dc.titleGeneral purpose RFICs using 0.35 um SiGeBiCMOS technologyen_US
dc.typeProceedings Paperen_US

Files

License bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description: