VERTICAL ELECTRO-OPTICAL COMPONENT AND METHOD OF FABRICATING THE SAME
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20140209883 | zh_TW |
| dc.contributor.author | Zan Hsiao-Wen | en_US |
| dc.contributor.author | Meng Hsin-Fei | en_US |
| dc.contributor.author | Tsai Wu-Wei | en_US |
| dc.contributor.author | Chao Yu-Chiang | en_US |
| dc.date.accessioned | 2014-12-16T06:14:46Z | |
| dc.date.available | 2014-12-16T06:14:46Z | |
| dc.date.issued | 2014-07-31 | en_US |
| dc.description.abstract | A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors. | zh_TW |
| dc.identifier.govdoc | H01L051/44 | zh_TW |
| dc.identifier.govdoc | H01L051/52 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104885 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | VERTICAL ELECTRO-OPTICAL COMPONENT AND METHOD OF FABRICATING THE SAME | zh_TW |
| dc.type | Patents | en_US |