Temperature Dependence of Ionization Rates in Ge
| dc.citation.epage | 82 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 77 | en_US |
| dc.citation.volume | 5 | en_US |
| dc.contributor.author | 戴寶通 | zh_TW |
| dc.contributor.author | 張俊彥 | zh_TW |
| dc.contributor.author | B.T.Dai | en_US |
| dc.contributor.author | C.Y.Chang | en_US |
| dc.date.accessioned | 2017-10-06T06:18:01Z | |
| dc.date.available | 2017-10-06T06:18:01Z | |
| dc.date.issued | 1971-04 | en_US |
| dc.description.abstract | The ionization rates of eletron and hole in germanium have been measured from 200°K to 300°K and were fit to the modified Baraff theory, in which the optical phononmean free path is temperature dependent and can be fit to the formula:λ=λ0 tanhEp/2KT, where Ep is the average optical phonon energy. The asymptotic optical phonon mean free paths wherin deduced from experiments are λ=73±4Å and λoh=84±4Å for electron and hole respectively which are in good agreement with that of Miller's data obtained at room temperature. A simplified approach to calculate the ionization rates from the photomultiplication data has also been deduced for the one sided abrupt junction. | en_US |
| dc.identifier.journal | 交大學刊 | zh_TW |
| dc.identifier.journal | SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/137463 | |
| dc.language.iso | en_US | en_US |
| dc.publisher | 交大學刊編輯委員會 | zh_TW |
| dc.title | Temperature Dependence of Ionization Rates in Ge | en_US |
| dc.type | Campus Publications | en_US |