Ferroelectric thin film processing for ferroelectric field-effect transistor
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 06852549 | zh_TW |
| dc.contributor.author | Chen | en_US |
| dc.contributor.author | San-Yuan | en_US |
| dc.contributor.author | Sun | en_US |
| dc.contributor.author | Chia-Liang | en_US |
| dc.contributor.author | Chin | en_US |
| dc.contributor.author | Albert | en_US |
| dc.date.accessioned | 2014-12-16T06:14:37Z | |
| dc.date.available | 2014-12-16T06:14:37Z | |
| dc.date.issued | 2005-02-08 | en_US |
| dc.description.abstract | The present invention relates to a method for manufacturing a ferroelectric field-effect transistor, particularly to a ferroelectric field-effect transistor with a metal/ferroelectric/insulator/semiconductor (MFIS) gate capacitor structure. The method comprises steps of depositing a bismuth layered ferroelectric film on the insulator buffered Si, after a high-temperature thermal treatment, depositing an upper electrode on the bismuth layered ferroelectric film. | zh_TW |
| dc.identifier.govdoc | H01L021/8238 | zh_TW |
| dc.identifier.govdoc | H01L021/00 | zh_TW |
| dc.identifier.govdoc | H01L021/8234 | zh_TW |
| dc.identifier.govdoc | H01L021/8244 | zh_TW |
| dc.identifier.govdoc | H01L021/20 | zh_TW |
| dc.identifier.govdoc | H01L021/8242 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104835 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Ferroelectric thin film processing for ferroelectric field-effect transistor | zh_TW |
| dc.type | Patents | en_US |