Improvement of quantum efficiency in green light-emitting diodes with pre-TMIn flow treatment
| dc.citation.epage | en_US | |
| dc.citation.issue | 22 | en_US |
| dc.citation.volume | 44 | en_US |
| dc.contributor.author | Lee, Ya-Ju | en_US |
| dc.contributor.author | Chen, Yi-Ching | en_US |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:44:32Z | |
| dc.date.available | 2014-12-08T15:44:32Z | |
| dc.date.issued | 2011-06-08 | en_US |
| dc.description.abstract | The effects of pre-trimethlyindium (TMIn) flow on the improved electrical characteristics and highly stable temperature properties of InGaN green light-emitting diodes (LEDs) are discussed. For the LED sample with a pre-TMIn flow treatment, the tunnelling of injected carriers associated with threading defects is significantly reduced, which promotes the diffusion-recombination of injected carriers, as well as the overall emission efficiency of the LED. In addition, the pre-TMIn flow treatment evidently reduces the dependence of external quantum efficiency on temperature and efficiency droop of green LEDs. As a result, we conclude that the pre-TMIn flow treatment is a promising scheme for the improvement of output performance of InGaN-based green LEDs. | en_US |
| dc.identifier.doi | 10.1088/0022-3727/44/22/224015 | en_US |
| dc.identifier.issn | 0022-3727 | en_US |
| dc.identifier.journal | JOURNAL OF PHYSICS D-APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/0022-3727/44/22/224015 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30064 | |
| dc.identifier.wosnumber | WOS:000290558300016 | |
| dc.language.iso | en_US | en_US |
| dc.title | Improvement of quantum efficiency in green light-emitting diodes with pre-TMIn flow treatment | en_US |
| dc.type | Article; Proceedings Paper | en_US |