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Angular-resolved Lasing Characteristics at Different Band Edges in GaN Photonic Crystal Surface Emitting Lasers

dc.contributor.authorChen, Shih-Weien_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorHou, Yun-Juen_US
dc.contributor.authorLiu, Ting-Chunen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:37:17Z
dc.date.available2014-12-08T15:37:17Z
dc.date.issued2010en_US
dc.description.abstractWe successfully demonstrated and analyzed the angular-resolved characteristics of GaN-based photonic-crystal surface emitting lasers at different band edges (Gamma, K, and M), showing specific lasing angles in measured dispersion diagram. (C) 2010 Optical Society of Americaen_US
dc.identifier.isbn978-1-55752-890-2en_US
dc.identifier.journal2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/25621
dc.identifier.wosnumberWOS:000290513601340
dc.language.isoen_USen_US
dc.titleAngular-resolved Lasing Characteristics at Different Band Edges in GaN Photonic Crystal Surface Emitting Lasersen_US
dc.typeArticleen_US

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