Cu-metalized compound semiconductor device
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 07420227 | zh_TW |
| dc.contributor.author | Chang | en_US |
| dc.contributor.author | Edward Yi | en_US |
| dc.contributor.author | Chang | en_US |
| dc.contributor.author | Shang-Wen | en_US |
| dc.contributor.author | Lee | en_US |
| dc.contributor.author | Cheng-Shih | en_US |
| dc.date.accessioned | 2014-12-16T06:14:29Z | |
| dc.date.available | 2014-12-16T06:14:29Z | |
| dc.date.issued | 2008-09-02 | en_US |
| dc.description.abstract | The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production. | zh_TW |
| dc.identifier.govdoc | H01L023/48 | zh_TW |
| dc.identifier.govdoc | H01L029/40 | zh_TW |
| dc.identifier.govdoc | H01L021/02 | zh_TW |
| dc.identifier.govdoc | H01L023/52 | zh_TW |
| dc.identifier.govdoc | H01L029/66 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104763 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Cu-metalized compound semiconductor device | zh_TW |
| dc.type | Patents | en_US |