Investigation of resistive switching of ZnxTiyHfzOi nanocomposite for RRAM elements manufacturing
| dc.citation.epage | 0 | en_US |
| dc.citation.spage | 0 | en_US |
| dc.citation.volume | 917 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Tominov, R. V. | en_US |
| dc.contributor.author | Zamburg, E. G. | en_US |
| dc.contributor.author | Khakhulin, D. A. | en_US |
| dc.contributor.author | Klimin, V. S. | en_US |
| dc.contributor.author | Smirnov, V. A. | en_US |
| dc.contributor.author | Chu, Y. H. | en_US |
| dc.contributor.author | Ageev, O. A. | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2019-04-03T06:48:02Z | |
| dc.date.available | 2019-04-03T06:48:02Z | |
| dc.date.issued | 2017-01-01 | en_US |
| dc.description.abstract | The resistive switching effect in ZnxTiyHfzOi nanocomposite film, grown by pulsed laser deposition technique, was investigated. It was shown that ZnxTiyHfzOi film surface had a granular structure with 0.8 +/- 0.4 mu m(2) grain size and 7.3 +/- 5.1 nm grain height. Resistive switching from high resistance state (HRS) to low resistance state (LRS) was occurred at 0.9 +/- 0.4 V, and from LRS to HRS at 1.5 +/- 0.2 V. HRS/LRS ratio was 2.6. The results can be used for nanocomposite-metaloxide-film RRAM fabrication. | en_US |
| dc.identifier.doi | 10.1088/1742-6596/917/3/032023 | en_US |
| dc.identifier.issn | 1742-6588 | en_US |
| dc.identifier.journal | 4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017) | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/1742-6596/917/3/032023 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/146889 | |
| dc.identifier.wosnumber | WOS:000423729100026 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Investigation of resistive switching of ZnxTiyHfzOi nanocomposite for RRAM elements manufacturing | en_US |
| dc.type | Proceedings Paper | en_US |