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垂直式有機電晶體及其製造方法

dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber200826290zh_TW
dc.contributor.author孟心飛en_US
dc.contributor.author洪勝富en_US
dc.contributor.author趙宇強en_US
dc.date.accessioned2014-12-16T06:13:02Z
dc.date.available2014-12-16T06:13:02Z
dc.date.issued2008-06-16en_US
dc.description.abstract本發明提出一種垂直式有機電晶體及其製造方法,此種垂直式有機電晶體乃是在基板上方垂直設有射極、柵極與集極,而射極與柵極之間、多孔洞之柵極與集極之間為有機半導體層,其載子通道的長度將可簡單的由有機半導體層之厚度所決定,並使得集極電流可以由射極與柵極孔洞間的電位差所貢獻出的空間電荷電流所決定,藉以達到利用柵極電壓來有效控制集極電流之目標,且本發明垂直式有機電晶體係具有簡單製程,並無須採用光微影蝕刻技術。zh_TW
dc.identifier.govdocH01L029/732zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/103985
dc.language.isozh_TWen_US
dc.title垂直式有機電晶體及其製造方法zh_TW
dc.typePatentsen_US

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