High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 angstrom
| dc.citation.epage | 17 | en_US |
| dc.citation.spage | 16 | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Wu, YH | en_US |
| dc.contributor.author | Chen, SB | en_US |
| dc.contributor.author | Liao, CC | en_US |
| dc.contributor.author | Chen, WJ | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:27:03Z | |
| dc.date.available | 2014-12-08T15:27:03Z | |
| dc.date.issued | 2000 | en_US |
| dc.description.abstract | High quality La2O3 and Al2O3 are fabricated with EOT of 4.8 and 9.6 Angstrom, leakage current of 0.06 and 0.4A/cm(2) and D-it of both 3x10(10) eV(-1)/cm(2), respectively. The high K is further evidenced from high MOSFET's I-d and g(m) with low I-off Good SILC and Q(BD) are obtained and comparable with. SiO2. The low EOT is due to the high thermodynamic stability in contact with Si and stable after H-2 annealing up to 550 degrees C. | en_US |
| dc.identifier.doi | 10.1109/VLSIT.2000.852751 | en_US |
| dc.identifier.isbn | 0-7803-6306-X | en_US |
| dc.identifier.journal | 2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/VLSIT.2000.852751 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19275 | |
| dc.identifier.wosnumber | WOS:000088359300006 | |
| dc.language.iso | en_US | en_US |
| dc.title | High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 angstrom | en_US |
| dc.type | Proceedings Paper | en_US |