A Comprehensive Study of Single-Electron Effects in Multiple-Gate MOSFETs
| dc.citation.epage | 26 | en_US |
| dc.citation.spage | 25 | en_US |
| dc.contributor.author | Lee, Wei | en_US |
| dc.contributor.author | Su, Pin | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:48:17Z | |
| dc.date.available | 2014-12-08T15:48:17Z | |
| dc.date.issued | 2008 | en_US |
| dc.identifier.isbn | 978-1-4244-2071-1 | en_US |
| dc.identifier.journal | 2008 IEEE SILICON NANOELECTRONICS WORKSHOP | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32187 | |
| dc.identifier.wosnumber | WOS:000279102800013 | |
| dc.language.iso | en_US | en_US |
| dc.title | A Comprehensive Study of Single-Electron Effects in Multiple-Gate MOSFETs | en_US |
| dc.type | Article | en_US |
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