Gal-xAlxAsl-yPy均一組成的液相成長
| dc.citation.epage | 28 | en_US |
| dc.citation.spage | 27 | en_US |
| dc.citation.volume | 4 | en_US |
| dc.contributor.author | 李耀亭 | zh_TW |
| dc.contributor.author | Y.T.Lee | en_US |
| dc.date.accessioned | 2017-10-06T06:22:51Z | |
| dc.date.available | 2017-10-06T06:22:51Z | |
| dc.date.issued | 1978-04 | en_US |
| dc.description.abstract | Aluminum and Phosphorus are distributed uniformly in Ga1-xAlxAs1-yPy epitaxial layer grown on GaAs substrate by Temperature Difference Method[4]. | en_US |
| dc.identifier.journal | 交通大學學報 | zh_TW |
| dc.identifier.journal | The Journal of National Chiao Tung University | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/137603 | |
| dc.language.iso | en_US | en_US |
| dc.publisher | 交大學刊編輯委員會 | zh_TW |
| dc.title | Gal-xAlxAsl-yPy均一組成的液相成長 | zh_TW |
| dc.title | An Uniformly Compositional Gal-xAlxAsl-yPy Layer Grown on GaAs by Liquid Phase Epitaxy | en_US |
| dc.type | Campus Publications | en_US |