FABRICATION OF MOSFETS USING LOW-TEMPERATURE LIQUID-PHASE DEPOSITED OXIDE
| dc.citation.epage | 104 | en_US |
| dc.citation.issue | 1-4 | en_US |
| dc.citation.spage | 101 | en_US |
| dc.citation.volume | 28 | en_US |
| dc.contributor.author | YEH, CF | en_US |
| dc.contributor.author | LIN, SS | en_US |
| dc.contributor.author | HONG, TY | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:22Z | |
| dc.date.available | 2014-12-08T15:03:22Z | |
| dc.date.issued | 1995-06-01 | en_US |
| dc.description.abstract | Low-temperature, high quality liquid-phase deposition (LPD) oxide was developed. The MOSFETs with such a new LPD oxide as gate insulators were investigated. The electrical characteristics, including threshold voltage of 2.1 Volts, peak effective mobility (mu(FE)) Of 580 cm(2)/V . s, and subthreshold swing of 134 mV/decade, show the devices exhibit comparable performance to other low-temperature processed MOSFETs. This demonstrates that LPD oxide can be an suitable candidate for future gate insulators in low-temperature processed MOSFETs. | en_US |
| dc.identifier.issn | 0167-9317 | en_US |
| dc.identifier.journal | MICROELECTRONIC ENGINEERING | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1902 | |
| dc.identifier.wosnumber | WOS:A1995RD49200022 | |
| dc.language.iso | en_US | en_US |
| dc.title | FABRICATION OF MOSFETS USING LOW-TEMPERATURE LIQUID-PHASE DEPOSITED OXIDE | en_US |
| dc.type | Article; Proceedings Paper | en_US |